14:30Invited speaker: Prof. Claire J. Carmalt (University College London, UK)
AACVD of metal oxides: from precursor synthesis to gas sensors, TCOs and photocatalysts
Molecular precursors have been developed for the preparation of metal oxide thin films. This work involves the design and synthesis of single-source precursors that contain all the elements required in the thin film. The design of the ideal precursor presents a significant challenge since it must be non-toxic and thermally stable and soluble for solution-based processes. Therefore precursors have been tailored to give clean, reproducible decomposition leading to high quality thin films with good coverage of the substrate. The functional properties of the films have been investigated, including their use as gas sensors, transparent conducting oxides and photocatalysts.
15:05Piera Bosso (University of Bari, It)
Deposition of water stable coatings containing carboxylic groups by an atmospheric pressure cold plasma jet
The aim of this work is to obtain chemically and morphologically water stable coatings containing carboxylic acid groups using an atmospheric pressure cold plasma jet fed with helium, acrylic acid (AA) and ethylene. It is shown that ethylene/acrylic acid codeposition allows the enhancement of the deposition rate and water stability of the coating with respect to the deposition from the only AA, without adding new chemical functionalities.
15:25Ann-Louise Anderson (University of London, UK)
The effect of surfactant addition in the production of titanium dioxide thin films via aerosol-assisted chemical vapour deposition
Titanium dioxide thin films were synthesized using aerosol-assisted chemical vapour deposition (AACVD) of titanium isopropoxide in toluene. Films were deposited onto F-SnO2 coated glass substrates at 400°C. Several types and concentrations of non-ionic surfactants were added to the precursor mixture to assess their resulting effects on thin film growth and microstructure. Films were characterized using SEM, XRD, Raman spectroscopy and UV-Vis spectroscopy. Photocatalytic activity of films was determined using resazurin intelligent ink testing and hydrophilicty by water contact-angle measurements.
15:45Mouhamadou Sarr (CRP-Gabriel Lippmann, LU)
Atomic Layer Deposition of Nickel nanomaterials using primary alcohols as reducing agent
Atomic Layer Deposition (ALD) of metal is reported starting from Metal-acetylacetonate and primary alcohols. The sequential reactions of both reactants with the species are shown to be self-limited which offer the possibility to deposit films and nanoparticles on complex structures. Depending on the alcohols used as a reactant, different films can be obtained including a metal film or a carbide one.
16:30Michael Reinke (Empa, CH)
Selective Area High Vacuum Chemical Vapor Deposition of TiO2 on Functionalized Surfaces below Pyrolytic Decomposition Temperatures
Selective area deposition of Titania using titanium tetra isopropoxide is reported in an HV-CVD process at deposition temperatures below pyrolytic decomposition temperatures. Local modification of the substrate surface energy by perfluoroalkylsilanization leads to a reduced surface reaction rate in these regions and prolongs the incubation period before film growth occurs. Here, a growth selectivity of better than 50nm was achieved.
Plasma Radicals Assisted Polymerization via Chemical Vapour Deposition of PEDOT thin films
Vapour phase processes of organic materials have been shifted from plasma techniques to more specific process designs enabling growth polymerization by oxidative and/or initiated chain-reaction. In this scenario we propose a novel technique, named PRAP-CVD, to synthesize organic semiconducting polymers. Object of the first study was the deposition of PEDOT.
17:10Luz Romero (University of London, UK)
Photocatalytic Synergy on Titanium Dioxide Thin Films Produced from the AC Electric Field Assisted Chemical Vapour Deposition of Titanium (IV) Chloride in Toluene
Titanium dioxide thin films were deposited from the electric field assisted aerosol chemical vapour deposition (EACVD) reaction of TiCl4 in toluene. Raman spectroscopy analysis revealed different composition of anatase and rutile depending on the field strength applied. It was observed an optimum of titania photocatalytic activity (half-life ~3.5 min) for anatase to rutile ratios close to 1:1 confirming a photocatalytic synergy.
17:30Poster session with standing buffet dinner
Hidetoshi Sugiura (University of Tokyo, JP)
Chemical Vapor Deposition Process for SiC Film using Tetramethylsilane/H2 system
In this study, basic characteristics of SiC-CVD from tetramethylsilane (TMS)/H2 system were investigated. We found that TMS can provide process with high growth rate and precursor conversion yield. Exceess amount of carbon was, however, detected in the deposited SiC film from TMS/H2. We then investigated the effect of adding HCl on SiC-CVD from TMS in order to achieve stoichiometric film composition and proved its effectiveness. TMS/H2 chemistry with adequate amount of HCl addition can perform high-speed and stoichiometric SiC film deposition.
David Duday (CRP-Gabriel Lippmann, LU)
Nanosecond pulsed dc atmospheric-pressure plasma enhanced chemical vapor deposition
Thanks to recent technological progress, atmospheric-pressure plasma enhanced chemical vapor deposition is thought to be one of the most promising ways to deposit ultrathin and thin polymer films. In this work, we show that conventional polymers can be deposited in a homogenous and adherent way by using nanosecond pulsed dc dielectric barrier discharge with Ar as process gas. Deposition rates and growth mechanisms are discussed.
Monika Rusek (University of Duisburg-Essen, DE)
Synthesis of group IV tellurides using tailor-made precursors
Herein we report on the synthesis of group IV tellurides (GeTe, SnTe, PbTe) using tailor-made precursors. Reactions between Ge-, Sn- and Pb-aminoalkoxides with Te(SiEt3)2 yielded spherical GeTe, PbTe nanoparticles and SnTe nanocubes, which were characterized by SEM, EDX and XRD.
Florian Hilt (CRP-Gabriel Lippmann, LU)
Atmospheric pressure plasma deposition of a phosphorus-containing precursor to promote flame retardant properties to PolyCarbonate
An innovative way to improve flame retardant properties of a polymer has been investigated. This method relates to the deposition of an efficient phosphorus-based coating at atmospheric pressure to confer flame retardant properties to a sensitive polymer substrate.
Kamal Baba (CRP-Gabriel Lippmann, LU)
Growth of nanostructured ZnO thin films by Spray Plasma technique
Nanostructured ZnO thin films are deposited on glass substrates using zinc nitrate or zinc chloride by Spray Plasma technique. It consists in the injection of an aerosol in a low pressure Ar/O2 radio-frequency inductive discharge. The effect of the precursor solution concentration and oxygen ratio in plasma gas on the film properties has been investigated.
Vincent Rogé (CRP-Gabriel Lippmann, LU)
ZnO nanowires grown by MOCVD for salicylic acid photocatalytic degradation
In this study we deeply investigate the impact of the Metal Organic Chemical Vapor Deposition (MOCVD) growth parameters of ZnO on the materials stoichiometry, morphology, crystalline and optical properties. A specific focus is related to the growth of photocatalytic ZnO nanowires and their efficiency to degrade solutions of salicylic acid.
CV Sunil Kumar (CRP-Gabriel Lippmann, LU)
Low temperature emitter passivation of boron doped crystalline silicon wafers
A novel method for passivation of boron doped emitters using amorphous silicon is developed using low temperature PECVD and a subsequent anneal. The passivation is compatible with process temperatures below 200°C and is not affected by further plasma processing and e-beam or PVD metallization.
Kohei Shima (University of Tokyo, JP)
Kinetics of Chemical Vapor Infiltration Using MTS/H2 for SiC Film Coating Revealed by Multi-Scale Analysis
Multi-scale analysis was applied to reveal and design MTS/H2 reaction for SiC-CVI process. Growth rate distribution, sticking probability, and the contribution ratio of species were investigated with the parameter of partial pressure, temperature and volume/surface ratio of the reactor. The strategy to achieve conformal growth of the film, especially into narrow and high-aspect-ratio features, will be discussed.
M. Arens (SENTECH Instruments GmbH, DE)
Moisture barrier deposition by combining PEALD and ICPECVD in one reactor
PEALD and ICPECVD techniques were used to deposit Al2O3 (alumina) combined with either silicon dioxide or plasma polymer layers on foil as moisture barrier for organic electronics. The hybrid multilayers were processed in the same reactor which enables both PEALD and ICPECVD. The moisture barrier performance was characterized by means of electrical calcium tests and the mechanical robustness was investigated with bending tests.
F. Maury (CIRIMAT, FR)
Visible photocatalytic activity of N-doped TiO2 nanofilms grown on stainless steel by a one-step CVD process
N-doped TiO2 nanofilms were deposited by atmospheric pressure CVD using TTIP and N2H4. There is a critical thickness for supported TiO2 films to maximize photocatalysis that is related to penetration depth of light. The photocatalytic efficiency both under UV and Visible light is strongly correlated with the main features of the films. The narrow growth conditions were determined.
Carlos Guerra (Empa, CH)
Controlling the Nucleation and Growth of TiO2 deposited by Atomic Layer Deposition on Carbon Nanotubes
Carbon nanotube/TiO2 nanocomposites have become a new functional material to use as a stratified photoanode to enhance the charge transport kinetics between the Titania and the current collector of dye-sensitized solar cells (DSSCs). To this end, in this work we studied the nucleation and growth of TiO2 deposited by Atomic Layer Deposition (ALD) on vertically aligned carbon nanotubes (VACNTs).
Christophe Lorant (Université Catholoque de Louvain, BE)
Simulation of low-temperature, atmospheric-pressure plasma enhanced chemical vapor deposition reactors
The simulation of low-temperature, atmospheric-pressure plasma enhanced chemical vapor deposition reactors is challenging due to the coupling of the fluid dynamics, the chemical reactions and the electric field and the stiffness of the resulting mathematical system. The model equations and the rigorous model reduction to reduce the stiffness are addressed in this paper. Considering pure nitrogen plasma, simulations with two configurations are discussed.